Fabrication and characterization of n- InSb Heterojunction for optoelectronic device

• Published in: Energy procedia 2019-01, Vol.157, p.90-99
• Main Authors: Ali, Hiba M., Hassun, Hanan K., al-Maiyaly, Bushra K.H., Shaban, Auday H.
• Format: Article
• Language: English
• Subjects: hetrojunction; n- InSb/p-Si; spectral resposivity; surface morphology
• ISSN: 1876-6102; 1876-6102
• DOI: 10.1016/j.egypro.2018.11.168

The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-InSb heterjuntion were successfully fabricated on p-Si substrates by thermal evaporation technique at different annealing temperature (as prepared, 400,500,600) °C. The effect of annealing temperature on the structural, surface morphology, optical and optoelectronic properties of InSb films were investigated and studied. The crystal structure of the film was characterized by X-ray diffraction and techniques. AFM techniques inspect the surface morphology of InSb films, the study presented the values of surface roughness, average diameter, and grain size alteration from ( 65.73nm-97.07nm) with increasing annealing temperature. The optical properties show high band gab with (600°C), The optoelectronic properties of the InSb heterojunction has been studied such I-V characteristics, spectral responsivity and carrier lifetime.