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Electrochemical pathway for the quantification of SERS enhancement factor
This communication presents a new pathway for the more precise quantification of surface-enhanced Raman scattering (SERS) enhancement factor via deducing resonance Raman scattering (RRS) effect from surface-enhanced resonance Raman scattering (SERRS). To achieve this, a self-assembled monolayer of 1...
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Published in: | Electrochemistry communications 2014-12, Vol.49, p.103-106 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This communication presents a new pathway for the more precise quantification of surface-enhanced Raman scattering (SERS) enhancement factor via deducing resonance Raman scattering (RRS) effect from surface-enhanced resonance Raman scattering (SERRS). To achieve this, a self-assembled monolayer of 1,8,15,22-tetraaminophthalocyanatocobalt(II) (4α-CoIITAPc) is formed on plasmon inactive glassy carbon (GC) and plasmon active GC/AuNP surface. The surfaces are subsequently used as common probes for electrochemical and Raman (RRS and SERRS) studies. The most crucial parameters required for the quantification of SERS substrate enhancement factor (SSEF) such as real surface area of GC/AuNPs substarte and the number of 4α-CoIITAPc molecules contributing to RRS (on GC) and SERRS (on GC/AuNPs) are precisely estimated by cyclic voltammetry experiments. The present approach of SSEF quantification can be applied to varieties of surfaces by choosing an appropriate laser line and probe molecule for each surface.
•AuNPs were potentiostatically deposited on GC surface.•4α-CoIITAPc SAM was formed on GC and GC/AuNPs.•RRS and SERRS studies were carried out on GC and GC/AuNP surfaces, respectively.•Real surface area of GC/AuNPs and surface coverage of 4α-CoIITAPc were electrochemically determined.•SERS enhancement factor was quantified by deducing RRS from SERRS. |
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ISSN: | 1388-2481 1873-1902 |
DOI: | 10.1016/j.elecom.2014.10.007 |