Electronic structure of xenon implanted with low energy in amorphous silicon

Electronic struture of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0–300 eV energy range. X-ray photoelectron spectr...

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Bibliographic Details
Published in:Journal of electron spectroscopy and related phenomena 2007-05, Vol.156, p.409-412
Main Authors: Barbieri, P.F., Landers, R., de Oliveira, M.H., Alvarez, F., Marques, F.C.
Format: Article
Language:English
Subjects:
Assisted deposition
Binding energy
Relaxation
Trapping
Voids
Xenon
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Summary:Electronic struture of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0–300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4N 45N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix.
ISSN:0368-2048
1873-2526
DOI:10.1016/j.elspec.2006.12.064