Direct observation of pseudo-gap electronic structure in the Heusler-type Fe2VAl thin film

•The electronic structure of a Heusler-type Fe2VAl thin film was studied by HAXPES.•The Fe2VAl thin film showed a semi-metallic pseudo-gap electronic structure.•The n- and p-type thermoelectric properties can be controlled by carrier doping.•The findings are important for future thermoelectric modul...

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Bibliographic Details
Published in:Journal of electron spectroscopy and related phenomena 2019-04, Vol.232, p.1-4
Main Authors: Miyazaki, Hidetoshi, Tateishi, Shogo, Matsunami, Masaharu, Soda, Kazuo, Yamada, Shinya, Hamaya, Kohei, Nishino, Yoichi
Format: Article
Language:English
Subjects:
Hard X-ray photoemission spectroscopy
Heusler-type Fe2VAl
Thermoelectric material
Thin film
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Summary:•The electronic structure of a Heusler-type Fe2VAl thin film was studied by HAXPES.•The Fe2VAl thin film showed a semi-metallic pseudo-gap electronic structure.•The n- and p-type thermoelectric properties can be controlled by carrier doping.•The findings are important for future thermoelectric module fabrication. We investigated the electronic structure of a thermoelectric material, Heusler-type Fe2VAl thin film, by hard X-ray photoemission spectroscopy and electronic band structure calculation to understand the improvement process of the thermoelectric properties of this material. Electronic structure of the Fe2VAl thin film showed a semi-metallic electronic structure with a pseudo-gap at the Fermi level. The observed electronic structure of the Fe2VAl thin film suggests that an optimal carrier doping exists to best control the n- and p-type thermoelectric properties and enhance the power factors.
ISSN:0368-2048
1873-2526
DOI:10.1016/j.elspec.2018.12.003