Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits

We present results on a novel punch-through diode structure that provides good clamping characteristics for both positive and negative polarity. Its performance as off-chip ESD protection device is compared to that of a conventional Zener diode with a comparable capacitance; showing that a punch-thr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electrostatics 2004-07, Vol.61 (3), p.149-169
Main Authors: van Dalen, R., Koops, G.E.J., Pfennigstorf, O.
Format: Article
Language:English
Subjects:
Electrostatic discharge
ESD protection
Punch through diode
Zener diode
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present results on a novel punch-through diode structure that provides good clamping characteristics for both positive and negative polarity. Its performance as off-chip ESD protection device is compared to that of a conventional Zener diode with a comparable capacitance; showing that a punch-through diode features better clamping characteristics and higher current handling at a given reverse stand-off voltage.
ISSN:0304-3886
1873-5738
DOI:10.1016/j.elstat.2004.02.004