Analysis of gate-coupled silicon controlled rectifier on HBM protection under voltage overshoot

A systematic study on the early failure of GCSCR ESD modules due to voltage overshoot is conducted. The ineptness of considering quasi-static TLP data alone on the design of HBM ESD structures with voltage overshoot is demonstrated with production level ESD module. GCSCR structures with different ES...

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Bibliographic Details
Published in:Journal of electrostatics 2019-11, Vol.102, p.103394, Article 103394
Main Authors: Madhusoodhanan, Syam, Sankaralingam, Rajkumar, Boselli, Gianluca, Chen, Zhong
Format: Article
Language:English
Subjects:
DENMOS
ESD
HBM
SCR
TLP
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Summary:A systematic study on the early failure of GCSCR ESD modules due to voltage overshoot is conducted. The ineptness of considering quasi-static TLP data alone on the design of HBM ESD structures with voltage overshoot is demonstrated with production level ESD module. GCSCR structures with different ESD parameters are fabricated and tested to analyze the behavior of voltage overshoot in an HBM event. Several design considerations are presented to achieve reliable HBM ESD protection structure.
ISSN:0304-3886
1873-5738
DOI:10.1016/j.elstat.2019.103394