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3-Silaoxetane and 3-silathietane: structure and reactivity studies on the basis of spectroscopic data and theoretical calculations

Raman spectra were obtained from 3-silaoxetane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-oxa-3-silacyclobutane ( 1) and 3-silathietane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-sila-3-thiacyclobutane ( 2) as a function of temperature. The experimental study together with ab initio and DFT calculations showed that...

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Published in:Inorganica Chimica Acta 2004-04, Vol.357 (6), p.1920-1930
Main Authors: Pavel, I., Strohfeldt, K., Strohmann, C., Kiefer, W.
Format: Article
Language:English
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Summary:Raman spectra were obtained from 3-silaoxetane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-oxa-3-silacyclobutane ( 1) and 3-silathietane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-sila-3-thiacyclobutane ( 2) as a function of temperature. The experimental study together with ab initio and DFT calculations showed that the cyclobutane ring in 2 is non-planar whereas the cyclobutane ring in 1 is planar. The ab initio and DFT calculations (structural parameters, electron localization function (ELF)) on 3-silaoxetane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-oxa-3-silacyclobutane ( 1) and 3-silathietane 3,3-dimethyl-2,2,4,4-tetraphenyl-1-sila-3-thiacyclobutane ( 2) show the cyclobutane ring in 2 as being non-planar with a C–Si–C angle of 89.2° and a C–S–C angle of 93.3°, whereas the cyclobutane ring in 1 is planar with an unusual small bond angle at the silicon atom of 74.7°, which can only be explained by bent bonds. Since the synthesis was performed in water, small bent angles cannot be indicative for high reactivity. The Raman spectra of 1 and 2 were then recorded and analyzed in the 1800–200 cm −1 spectral region at various temperatures (300–10 K) with the help of the DFT calculation results (harmonic vibrational wavenumbers, Raman scattering activities). Although the wavenumber shifts are quite small, the subtle changes in the spectral features of the 3-silaoxetane and phenyl rings vibrational modes may indicate a loss of symmetry in 1 (between 200 and 150 K) and a possible phase transition in 2 (at about 200 K). Furthermore, the Raman spectra of 1 and 2 confirmed the ELF calculation results, excluding any bond interaction between the silicon and the oxygen or sulfur atom.
ISSN:0020-1693
1873-3255
DOI:10.1016/j.ica.2003.12.044