Efficiency enhancement of novel CNTS/ZnS/Zn (O, S) thin film solar cell

• Published in: Optik (Stuttgart) 2018-10, Vol.171, p.453-462
• Main Authors: Khattak, Yousaf Hameed, Baig, Faisal, Soucase, Bernabé Marí, Beg, Saira, Gillani, Syed Rizwan, Ahmed, Salman
• Format: Article
• Language: English
• Subjects: CNTS; Cu2NiSnS4; Efficiency enhancement; Numerical analysis; SCAPS; Solar cell; Zn(O,S)
• ISSN: 0030-4026; 1618-1336
• DOI: 10.1016/j.ijleo.2018.06.001

•The performance of a novel structure of CNTS/ZnS/Zn(O, S) is described in this work.•The proposed cell performance is analyzed by means of numerical modeling.•Performance of solar cell is highly depended upon physical parameters of solar cell.•Absorber layer thickness and acceptor doping concentration play a key role in deice performance. Cu2NiSnS4 is non-toxic earth abundant material and a promising quaternary semiconductor compound. It is conspicuous and suitable class of material for the manufacturing of high efficiency, low cost and sustainable thin film photovoltaic cell. A novel structure  CNTS/ZnS/Zn(O,S)/FTO is proposed in this work for the efficiency enhancement of CNTS based photovoltaic cell. Up till now there has been no model proposed to use Zn(O,S) as electron transport layer for CNTS based device. In this work we proposed for the first time a novel  Zn(O,S) electron transport layer for the efficiency enhancement of  CNTS thin film photovoltaic cell. Device modeling is performed on solar cell capacitance simulator (SCAPS) program under 1.5 A M illumination spectrum. Promising optimized functional parameters had been achieved with the conversion efficiency of 17.06%, open circuit voltage (Voc) of 664mV, short-circuit current (Jsc) of 31.19 mA/cm2 and fill factor (FF) of 82.37%. The above results will give an imperative guideline for the feasible fabrication of high efficiency CNTS based photovoltaic cells.