Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes

•In this work, we report a second-order polynomial fit function of the experimental built-in electromechanical field using electroreflectance spectroscopy for the samples ranging from indium compositions of 10% to 30% i.e. the visible range.•With increasing indium-content, experimental built-in fiel...

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Bibliographic Details
Published in:Optik (Stuttgart) 2018-11, Vol.172, p.1193-1198
Main Authors: Muhammad, Usman, Nawaz, Nabila, Saba, Kiran, Karimov, Khasan, Muhammad, Nazeer
Format: Article
Language:English
Subjects:
Built-in polarization
Device modeling
Electroreflectance spectroscopy
Light-emitting diode
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Summary:•In this work, we report a second-order polynomial fit function of the experimental built-in electromechanical field using electroreflectance spectroscopy for the samples ranging from indium compositions of 10% to 30% i.e. the visible range.•With increasing indium-content, experimental built-in field measured by electroreflectance spectroscopy doesn’t increase as predicted by theory.•In addition, numerical analysis of the effect of the indium-content on the band diagram, built-in field and internal quantum efficiency has also been reported. A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%–30%. The experimental built-in fields of the samples have been measured using electroreflectance spectroscopy. The comparison of the experiment and theory has also been presented. Numerical analysis of the effect of the indium-content on the band diagram, built-in field and internal quantum efficiency is also discussed.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2018.07.081