Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique

Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE) technique. The morphology properties of PS specimens that formed with different etching time has been study utilize Scanning electron microscopy (SEM) and it show that the Layer of pore has sponge like stricture...

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Bibliographic Details
Published in:Optik (Stuttgart) 2020-03, Vol.206, p.164325, Article 164325
Main Authors: Abdulkhaleq, Nour A., Hasan, Abbas K., Nayef, Uday M.
Format: Article
Language:English
Subjects:
Morphological properties
Photodetectors
Photoelectrochemical etching
Porous silicon
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Summary:Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE) technique. The morphology properties of PS specimens that formed with different etching time has been study utilize Scanning electron microscopy (SEM) and it show that the Layer of pore has sponge like stricture and the average pore diameter of PS layer rising with increase etching time. The X-ray diffraction (XRD) pattern indicated the nanocrystaline of the specimens, during these results; we showed improve behavior of PS photodetectors on a range of wavelengths.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2020.164325