Combination of μW-PCD and SPV techniques for bulk and surface defects densities measurements

In semiconductor applications, surface and interface defects play a key-role on the electronic properties of the device. Several non destructive tools can be combined to characterize these defects. From microwave-Photo-Conductivity Decay (μW-PCD) measurements, one can access to an effective measurem...

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Bibliographic Details
Published in:Optik (Stuttgart) 2021-01, Vol.226, p.165906, Article 165906
Main Authors: Ben Alaya, C., Dridi Rezgui, B., Aouida, S., Bouaicha, M.
Format: Article
Language:English
Subjects:
Lifetime
Silicon
SPV
Surface defects
μW-PCD
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Summary:In semiconductor applications, surface and interface defects play a key-role on the electronic properties of the device. Several non destructive tools can be combined to characterize these defects. From microwave-Photo-Conductivity Decay (μW-PCD) measurements, one can access to an effective measurement of lifetime of minority carriers that characterizes both the surface and the bulk semiconductor material. On the other hand, Surface Photo-Voltage (SPV) is a powerful technique that gives credible bulk lifetime values from minority carriers’ diffusion length measurements. In this paper, we use a nondestructive method by which we determine the surface and bulk defects densities in crystalline silicon wafers by combining μW-PCD and SPV tools using an adequate theoretical approach. We apply this method to three surface morphologies; a mirror-polished sample, a CP4 etched sample and a pyramidal textured sample.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2020.165906