Towards improving the optoelectronics properties of MAPbI3(1−x)B3x/ZnO heterojunction by bromine doping

In this work, The MAPbI3(1−x)B3x thin films with different percentage (x% = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1) was successfully deposited on zinc oxide (ZnO) by spin coating technique. Herein we report the study of monovalent halide anion bromide (Br-) doped methylammonium lead iodine (MAPbI3). Br dopin...

Full description

Saved in:
Bibliographic Details
Published in:Optik (Stuttgart) 2022-01, Vol.249, p.168283, Article 168283
Main Authors: Fradi, Khawla, Bouich, Amal, Slimi, Bechir, Chtourou, Radhouane
Format: Article
Language:English
Subjects:
Heterojunction
MAPbI3(1−x)B3x
Optical properties
Thin films
ZnO
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, The MAPbI3(1−x)B3x thin films with different percentage (x% = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1) was successfully deposited on zinc oxide (ZnO) by spin coating technique. Herein we report the study of monovalent halide anion bromide (Br-) doped methylammonium lead iodine (MAPbI3). Br doping shown to be efficient to improve the optoelectronic properties and stability of MAPbI3(1−x)B3x/ZnO heterojunction. We investigate the effect of x% of bromine on the composition and morphology of films by X-ray diffraction (XRD), spectroscopy electron microscopy(SEM),Photoluminescence (PL) and UV–visible spectroscopy. The MAPbI3(1−x)B3x/ZnO films show that an adequate amount of x% Br leads to a homogeneous perovskite film with large grains, no pinholes with the band gap between 1.55 and 2.1 eV and the photoluminescent emission spectrum starts with the value 538 nm (MAPbBr3) up to780 nm (MAPbI3).
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2021.168283