Temperature rise in crystals subjected to ultrasonic influence

The nonuniform temperature distribution in the surface of Hg1−xCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving i...

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Bibliographic Details
Published in:Infrared physics & technology 2005-06, Vol.46 (5), p.388-393
Main Authors: Savkina, R.K., Smirnov, A.B.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Dislocation
Exact sciences and technology
Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, epr, nmr, etc.)
Infrared radiation
Interaction between different crystal defects
gettering effect
Physics
Structure of solids and liquids
crystallography
Temperature changes
Ultrasound
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Summary:The nonuniform temperature distribution in the surface of Hg1−xCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving in an ultrasonic field was considered as a linear thermal source and the temperature distribution around the dislocation was calculated. The discrete distribution of thermal sources is realised for Hg1−xCdxTe solid solutions at the average dislocation density ∼1010m−2. The model of the sonic-stimulated activation of internal sources of the infrared radiation was proposed.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2004.06.008