Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

• Published in: Infrared physics & technology 2007-04, Vol.50 (2-3), p.194-198
• Main Authors: Weerasekara, A.B., Rinzan, M.B.M., Matsik, S.G., Perera, A.G.U., Buchanan, M., Liu, H.C., von Winckel, G., Stintz, A., Krishna, S.
• Format: Article
• Language: English
• Subjects: Applied sciences; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Iii-v semiconductors; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Multilayers, superlattices; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Optical properties of specific thin films; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2006.10.019

Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f0, of 3.2THz (93μm) was obtained by using n-type GaAs emitter doped to 1×1018cm−3 and Al0.04Ga0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2THz (10–93μm) with peak responsivity of 6.5A/W at 7.1THz under a forward bias field of 0.7kV/cm at 6K. The peak quantum efficiency and peak detectivity are ∼19% and ∼5.5×108Jones, respectively under a bias field of 0.7kV/cm at 6K. In addition, the detector can be operated up to 25K.