nBn dark current reduction by UV hydrogenation

This study reports on hydrogenation of InAs nBn photodetectors grown on a lattice mismatched GaAs substrate. The mismatched growth causes increases in dark current by factors of 8–16 (voltage- and temperature-dependent), with respect to similar lattice matched growth. UV hydrogenation of the mismatc...

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Bibliographic Details
Published in:Infrared physics & technology 2013-07, Vol.59, p.156-157
Main Authors: Jain, M., Pedrazzani, J.R., Golding, T.G., Cottier, R., Holland, O.W., Hellmer, R., Wicks, G.W.
Format: Article
Language:English
Subjects:
Dark current
Detector
Hydrogenation
InAs
nBn
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Summary:This study reports on hydrogenation of InAs nBn photodetectors grown on a lattice mismatched GaAs substrate. The mismatched growth causes increases in dark current by factors of 8–16 (voltage- and temperature-dependent), with respect to similar lattice matched growth. UV hydrogenation of the mismatched nBn’s produced significant decrease in dark current without decreasing the photocurrent.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2012.12.032