InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range

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Bibliographic Details
Published in:Infrared physics & technology 2015-11, Vol.73, p.232-237
Main Authors: Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Format: Article
Language:English
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ISSN:1350-4495
DOI:10.1016/j.infrared.2015.09.017