The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

• Published in: Infrared physics & technology 2015-11, Vol.73, p.312-315
• Main Authors: Kovchavtsev, A.P., Guzev, A.A., Tsarenko, A.V., Panova, Z.V., Yakushev, M.V., Marin, D.V., Varavin, V.S., Vasilyev, V.V., Dvoretsky, S.A., Sabinina, I.V., Sidorov, Yu.G.
• Format: Article
• Language: English
• Subjects: Heterostructure; HgCdTe (MCT); Infrared detector; Molecular-beam epitaxy (MBE); n-on-p photodiode; p-on-n photodiode
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2015.09.026

•The temperature dependences of the reverse current of CdxHg1−xTe of “p-on-n” and “n-on-p” junctions are presented.•Experimental data have shown close agreement with theory.•Parameters of deep levels were estimated. We investigated the temperature dependences of reverse current of “p-on-n” and “n-on-p” junctions fabricated in Cd0.39Hg0.61Te and Cd0.38Hg0.62 heterostuctures grown by MBE on Si substrates. The experimental data of reverse current through “p-on-n” junction in Arrhenius coordinates described by the diffusion of charge carriers in temperature range 210–330K and carrier generation through the deep level located in the middle of the band gap in temperature range of 138–210K. The experimental data of reverse current through “n-on-p” junction in Arrhenius coordinates described by diffusion of charge carriers in temperature range 170–300K and carrier generation through the deep level located in the middle of the band gap in temperature range 130–170K, At temperature range 77–130K reverse current through “n-on-p” junction was constant and depended on bias voltage.