Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

•A pBn GaSb/AlAsSb/InPSb photodetector was fabricated and characterized.•The photoluminescence peak is 3µm at 300K.•The quantum efficiency at λ=2.2µm and −0.5V, for 300K, is above 30%. A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9µm, for the short wave infrared range was fab...

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Bibliographic Details
Published in:Infrared physics & technology 2017-09, Vol.85, p.81-85
Main Authors: Cohen-Elias, D., Uliel, Y., Cohen, N., Shafir, I., Westreich, O., Katz, M.
Format: Article
Language:English
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Summary:•A pBn GaSb/AlAsSb/InPSb photodetector was fabricated and characterized.•The photoluminescence peak is 3µm at 300K.•The quantum efficiency at λ=2.2µm and −0.5V, for 300K, is above 30%. A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9µm, for the short wave infrared range was fabricated and characterized. At −0.5V the dark current at 300 and 200K was 1.5×10−1 and 3.5×10−3A/cm2 and the detectivity was above 109 and 1010cm-Hz1/2/Watt respectively. The quantum efficiency at λ=2.2µm and −0.5V, for 300K and 200K, is 39% and 48% respectively. A simulation implies that a potential barrier for generated holes degrades the optical performances at zero bias. Electrical characteristics at different temperatures and details of the process flow are also described.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2017.05.021