Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD

•Growth details of InGaAs/GaAsSb T2SL using MOCVD were described.•Type II transition was observed using photoluminescence measurements.•We have shown that the T2SL can be used as an absorption layer for eSWIR Photodetector. A type II superlattice InGaAs/GaAsSb based on InP for extended short wave in...

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Bibliographic Details
Published in:Infrared physics & technology 2018-12, Vol.95, p.199-202
Main Authors: Elias, D.C., Shafir, I., Meir, T., Sinai, O., Memram, D., Shusterman, S.S., Katz, M.
Format: Article
Language:English
Subjects:
eSWIR
InGaAs/GaAsSb
Superlattice
Type II
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Summary:•Growth details of InGaAs/GaAsSb T2SL using MOCVD were described.•Type II transition was observed using photoluminescence measurements.•We have shown that the T2SL can be used as an absorption layer for eSWIR Photodetector. A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2018.10.032