Structural, vibrational, morphological, optical and electrical properties of NiS and fabrication of SnS/NiS nanocomposite for photodetector applications

• Published in: Inorganic chemistry communications 2021-11, Vol.133, p.108882, Article 108882
• Main Authors: Abhiram, N., Thangaraju, D., Marnadu, R., Johnsy Arputhavalli, G., Gunasekaran, S., Vetrivelan, P., Latha Devi, N.S.M.P., Shkir, Mohd, Algarni, H.
• Format: Article
• Language: English
• Subjects: I-V Characteristics; Photodiode parameters; Solvothermal synthesis
• ISSN: 1387-7003; 1879-0259
• DOI: 10.1016/j.inoche.2021.108882

Development of p-SnS:NiS (80:20)/n-Si photodiode for optoelectronic devices. [Display omitted] •Development of p-SnS:NiS and bare p-NiS/n-Si photodetectors are reported.•Phase optimization of NiS and fabrication of SnS/NiS nanocomposite.•Morphology evolution of NiS and SnS/NiS was studied on oleic acid addition.•The value of photosensitivity improved from 75.0% to 2168.1%.•The value detectivity varied from 1.45 × 109 to 5.99 × 1010 jones. Synthesis of metal chalcogenides nanostructures is of profound importance in obtaining desired properties for photo-sensing device fabrication. The present proposed work concentrates on the effect of oleic acid in the preparation of NiS and SnS/NiS composites, and their photodiode properties were examined. Synthesized NiS and SnS/NiS nanosystem characterized by XRD analysis, Raman analysis, Field Emission Scanning Electron Microscopy micrographs. Hexagonal structure of NiS and hexagonal and orthorhombic composite structures SnS/NiS composite was confirmed with XRD patterns. The single-phase SnS nanoparticle and SnS/NiS nanocomposite were confirmed with Raman analysis. The change in morphology while increasing oleic acid on the preparation of NiS and SnS/NiS as aggregated quasi sphere structures were verified with FE-SEM micrographs. SnS/NiS fabricated with different ratios, and oleic acid-assisted NiS composite particles show better photo-response, which is essential for photodiode application.