Electronic properties of CeRh1−xGexIn; evolution from an intermediate-valence to a localized 4f-state

• Published in: Intermetallics 2015-01, Vol.56, p.101-106
• Main Authors: Wiśniewski, P., Zaremba, V.I., Ślebarski, A., Kaczorowski, D.
• Format: Article
• Language: English
• Subjects: A. Intermetallics; B. Electrical properties; B. Electronic structure; B. Magnetic properties; B. Thermoelectric properties; F. X-ray diffraction
• ISSN: 0966-9795
• DOI: 10.1016/j.intermet.2014.09.001

We examined how electronic properties of the intermediate-valent CeRhIn are influenced by gradual substitution of rhodium with germanium. Results of specific-heat, magnetic susceptibility, electrical resistivity, thermopower and X-ray photoelectron spectroscopy (XPS) measurements performed in wide range of temperature and magnetic field on polycrystalline samples of CeRh1−xGexIn, for x = 0.1, 0.2 and 0.3, are presented and compared to corresponding data reported earlier for CeRhIn, its hydrides and CePdxRh1−x In solutions. A systematic shift from the intermediate-valence to a localized 4f-state with increasing content of germanium is evident from all obtained results. Non-Fermi liquid state is formed at low temperatures for the solution with the lowest Ge content, but it is destroyed by magnetic field and/or further doping with Ge. •CeRhIn doped with Ge evolves from intermediate-valence towards stable Ce3+ state.•Thermopower data are perfectly fitted with a double-band quasiparticle model.•Small substitution of Rh with Ge induces non-Fermi-liquid ground state.•Electronic gamma coefficient in specific heat increases strongly with the doping.•XPS clearly reveals decreasing partial valence of Ce and f-(p,d)-hybridization.