Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

► N-doped ZnO thin films by spray pyrolysis. ► Existence of NZnO structure in NZO thin film. ► Raman, XPS, FESEM, AFM and optical properties. ► UV, blue, and green deep-level emissions in NZO films. N-doped ZnO (NZO) thin films are synthesized via spray pyrolysis technique in aqueous medium treating...

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Bibliographic Details
Published in:Journal of analytical and applied pyrolysis 2012-09, Vol.97, p.181-188
Main Authors: Shinde, S.S., Shinde, P.S., Oh, Y.W., Haranath, D., Bhosale, C.H., Rajpure, K.Y.
Format: Article
Language:English
Subjects:
crystal structure
emissions
N-doped ZnO
nanocrystals
nitrogen
Optoelectronic properties
photoluminescence
pyrolysis
Semiconductors
Spray pyrolysis
X-ray photoelectron spectroscopy
zinc
zinc acetate
zinc oxide
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Summary:► N-doped ZnO thin films by spray pyrolysis. ► Existence of NZnO structure in NZO thin film. ► Raman, XPS, FESEM, AFM and optical properties. ► UV, blue, and green deep-level emissions in NZO films. N-doped ZnO (NZO) thin films are synthesized via spray pyrolysis technique in aqueous medium treating zinc acetate and N,N-dimethylformamide as precursors. Influence of N doping on structural, optical and luminescence properties have been investigated. Films are nanocrystalline having hexagonal crystal structure. Raman analysis depicts an existence of NZnO structure in NZO thin film. XPS spectrum of N 1s shows the 400eV peak terminally bonded, well screened molecular nitrogen (γ-N2). Lowest direct band gap of 3.17eV has been observed for 10at% NZO thin film. The UV, blue, and green deep-level emissions in photoluminescence of NZO films are due to Zn interstitials and O vacancies.
ISSN:0165-2370
1873-250X
DOI:10.1016/j.jaap.2012.06.007