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Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy
► We grow single crystalline InAsSb on (100) InSb by LPE with three different compositions. ► No dissolution happened at the interface of the film and the substrate. ► Smallest FWHM of the (400) RC for this kind of material has been detected by HRXRD. ► A cut-off wavelength longer than 8μm has been...
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Published in: | Journal of alloys and compounds 2012-09, Vol.535, p.39-43 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ► We grow single crystalline InAsSb on (100) InSb by LPE with three different compositions. ► No dissolution happened at the interface of the film and the substrate. ► Smallest FWHM of the (400) RC for this kind of material has been detected by HRXRD. ► A cut-off wavelength longer than 8μm has been detected.
InAsxSb1−x single crystalline films with x from 0.02 to 0.05 have been successfully grown on (100) InSb substrates by liquid phase epitaxy without a buffer layer. High-resolution X-ray diffraction (HRXRD) was used to characterize the crystal quality of the films. The full-width at half-maximum (FWHM) of the (400) rocking curve (RC) line ranged from 157.96 to 417.02arcsec, revealing that the films are good single crystals with (100) surface orientation. Composition of the films was analyzed by energy dispersive X-ray analysis (EDXA) and HRXRD using Vegard’s law. The surface microstructures and morphologies of the films were characterized by scanning electronic microscopy (SEM) and optical microscopy. Optical properties were characterized by Fourier transform infrared (FTIR) transmission spectrum. A cut-off wavelength of 8.06μm at x=0.05, indicates the potential applications of the material for long-wavelength infrared detectors. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2012.04.049 |