Electrochemical deposition of diluted magnetic semiconductor ZnMnSe2 on reduced graphene oxide/polyimide substrate and its properties

• Published in: Journal of alloys and compounds 2014-10, Vol.609, p.233-238
• Main Authors: Jia, Lingpu, Yu, Shengjiao, Jiang, Yimin, Wang, Chunming
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diluted magnetic semiconductor; Electrode deposition; Electrodeposition, electroplating; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Magnetic properties and materials; Magnetic semiconductors; Magnetism; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Photoconduction and photovoltaic effects; photodielectric effects; Photoelectric property; Physics; Studies of specific magnetic materials; ZnMnSe2
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2014.04.178

[Display omitted] •The flexible reduced graphene/polyimide conductive substrate was made.•The ZnMnSe2 semiconductor has special porous structure.•The ZnMnSe2 has remarkable photoelectric property, the potential difference is 0.27V.•The semiconductor ZnMnSe2 has magnetism, and the Ms is 1.53emucm−3. Diluted magnetic semiconductor ZnMnSe2 has been synthesized on reduced graphene oxide/polyimide (rGO/PI) substrate by a simple electrochemical method. The structure, surface morphology, magnetism and photoelectric property of ZnMnSe2 were examined. For comparison, ZnSe and MnSe were also prepared by electrochemical deposition. Porous structure of ZnMnSe2 was obtained, and the porous structure was consisted of nanosheets. The atomic ratio of Zn, Mn and Se was measured to be 1:1:2 by X-ray photoelectron spectra and energy-dispersive X-ray spectroscopy. The high resolution transmission electron microscopy and X-ray Powder Diffraction pattern confirmed the preferred crystal growth orientation was the (111) direction. The absorption spectrum provided a band gap of 2.4eV. Open-circuit potential measurement indicated that ZnMnSe2 composite film was a good p-type semiconductor material. The photoelectrical phenomena of ZnSe, MnSe and ZnMnSe2 were observed, and the optoelectronic property of ZnMnSe2 was the best, the potential difference was 0.27V. Besides, the ZnMnSe2 composite film had prominent magnetism, and it was ferromagnetism material. These results indicated that rGO/PI–ZnMnSe2 composite film by electrochemical deposition was a promising ferromagnetism semiconductor.