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Study of electromigration resistance of (Pd,Ni)Sn4 phase in lead-free solder joints
A Pd layer is frequently deposited on a Ni substrate as a surface finish in electronic packaging. During soldering process, the (Pd,Ni)Sn4 phase is formed at the solder/Ni interface and it is able to reduce electromigration damage. In this study, various interfacial structures, Sn/Pd(1 or 3 μm)/Ni a...
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Published in: | Journal of alloys and compounds 2016-01, Vol.654, p.546-553 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A Pd layer is frequently deposited on a Ni substrate as a surface finish in electronic packaging. During soldering process, the (Pd,Ni)Sn4 phase is formed at the solder/Ni interface and it is able to reduce electromigration damage. In this study, various interfacial structures, Sn/Pd(1 or 3 μm)/Ni and Sn/Cu(3 μm)/Pd(1 μm)/Ni, were designed to conduct electromigration tests. The results revealed that the electromigration resistance of the (Pd,Ni)Sn4 was closely associated with the Ni content. In the Sn/Pd(1 or 3 μm)/Ni couple, the (Pd,Ni)Sn4 layer with a high Ni solubility of ∼17 at% cannot retard electromigration. The (Pd,Ni)Sn4 phase was massively migrated into the solder matrix and the Ni substrate was considerably consumed. In the Sn/Cu(3 μm)/Pd(1 μm)/Ni couple, the formed (Pd,Ni)Sn4 layer with a low Ni content ( |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2015.09.132 |