Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications

In this work, new 3D vertical RRAM device with silicon CMOS compatibility and the possible fabrication process are presented. RRAM devices based on Ni/Si3N4/p+-Si stack which are applicable in our proposed 3D vertical RRAM structure were fabricated in order to reveal the effects of switching layer t...

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Bibliographic Details
Published in:Journal of alloys and compounds 2016-04, Vol.663, p.419-423
Main Authors: Kim, Sungjun, Kim, Hyungjin, Jung, Sunghun, Kim, Min-Hwi, Lee, Sang-Ho, Cho, Seongjae, Park, Byung-Gook
Format: Article
Language:English
Subjects:
3D vertical structure
Compliance current
Film thickness
Resistive random-access memory (RRAM)
Silicon nitride (Si3N4)
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Summary:In this work, new 3D vertical RRAM device with silicon CMOS compatibility and the possible fabrication process are presented. RRAM devices based on Ni/Si3N4/p+-Si stack which are applicable in our proposed 3D vertical RRAM structure were fabricated in order to reveal the effects of switching layer thickness and compliant current on resistive switching parameters. Forming-less behavior can be easily achieved by controlling thickness of the Si3N4 layer. It is found that the high- and low-resistance state can be effectively modulated by the film thickness and compliance current, respectively. [Display omitted] •New 3D vertical RRAM structure with CMOS compatibility is proposed.•Forming-less behavior can be achieved by controlling film thickness.•HRS can be modulated by film thickness.•LRS can be tuned by compliance current.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2015.10.142