Lattice-related understanding regarding V-doping induced ZnO n-to-p type shift within LCT scope

• Published in: Journal of alloys and compounds 2017-01, Vol.691, p.545-553
• Main Authors: Mhamdi, A., Saafi, I., Hendi, A.A., Amlouk, A., Boubaker, K., Amlouk, M.
• Format: Article
• Language: English
• Subjects: Amlouk-Boubaker opto-thermal expansivity ψAB; Optical properties; PL measurements; Urbach tailing; Vanadium doping; Zinc oxide
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2016.08.294

Nowadays, experiments based on possible controlling of the electrical conductivity of ZnO material as thin film and nano-forms are in progress. To reach especially p-type ZnO remains a principal challenge for many of research teams. Also, there are still problems concerning the stability of the p-type conductivity of this binary oxide. Herein, we reported a first principal explanation under the well known Lattice Compatibility Theory (LCT) to a noticeable n/p shift of 3% vanadium doped ZnO sprayed thin films published recently [1]. This paper gives plausible understanding of this change of ZnO character found by means of ethanol gas sensing. Moreover, the photoluminescence study of V doped ZnO thin films reinforce the change in their electrical character because such doping may behave both as a donor and as an acceptor in ZnO matrix. •Structural, morphological and optical properties of V- doped ZnO thin films have been studied.•The gas sensing application of ZnO doped vanadium thin films has been studied.•Lattice Compatibility Theory explains the n-to-p shift of type character of ZnO material.