Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films

• Published in: Journal of alloys and compounds 2017-03, Vol.697, p.388-391
• Main Authors: Li, Wenhao, Peng, Yangke, Wang, Chong, Zhao, Xiaolong, Zhi, Yusong, Yan, Hui, Li, Linghong, Li, Peigang, Yang, Hujiang, Wu, Zhenping, Tang, Weihua
• Format: Article
• Language: English
• Subjects: Doping; Ga2O3:Pr; Photoluminescence; Thin film
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2016.12.143

(2¯01) oriented Pr-doped β-Ga2O3 (Ga2O3:Pr) thin films have been grown on (000l) α-Al2O3 substrates using radio frequency magnetron sputtering method. The influences of the dopant contents on the structural and optical properties of the Ga2O3:Pr thin films have been systematically studied. With the increase of Pr concentration, the c-axis lattice parameter of β-Ga2O3 are elongated, with the energy band gap shrinks. The Ga2O3:Pr films show a broad-band blue (∼490 nm) and a pronounced red (∼615 nm) photoluminescence under 255 nm light illumination. The obtained photoluminescence results are related to the energy transfer of cross relaxation process within the 4f2 configuration of the Pr3+. This work may provide a prominent candidate for further developing advanced composite materials incorporated with luminescent ions. •β-Ga2O3 (Eg: ∼4.9 eV) is an ideal host for lanthanide ions doping.•The effects of the dopant on structural and optical properties are investigated.•Ga2O3:Pr exhibit controllable red emission ascribed to 1D2 → 3H4 transition.