Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers

ZnO thin film transistors (TFTs) with reduced graphene oxide (RGO)-embedded channel layers were fabricated and their electrical properties were compared with those of ZnO TFTs with no embedded layer (bare ZnO TFT), with Cr-embedded channel layers, and with a RGO/ZnO bilayer channel. Compared to the...

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Bibliographic Details
Published in:Journal of alloys and compounds 2019-03, Vol.777, p.1367-1374
Main Authors: Oh, Sungmin, Lee, Tae Ho, Chae, Myung-Sic, Park, Ju Hyun, Kim, Tae Geun
Format: Article
Language:English
Subjects:
Indium-free
Reduced graphene oxide
Saturation mobility
Thin film transistor
Zinc oxide
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Summary:ZnO thin film transistors (TFTs) with reduced graphene oxide (RGO)-embedded channel layers were fabricated and their electrical properties were compared with those of ZnO TFTs with no embedded layer (bare ZnO TFT), with Cr-embedded channel layers, and with a RGO/ZnO bilayer channel. Compared to the reference samples, the proposed ZnO TFTs with RGO-embedded layers exhibited very stable unipolar transfer characteristics with enhanced carrier mobility of 1.13 cm2 V−1 s−1, subthreshold swing of 0.53 V decade−1, and on/off ratio of 2.31 × 107, unlike most previous reports of graphene-embedded ZnO TFTs which exhibited undesirable ambipolar behavior. These improvements are attributed to the high carrier mobility of the RGO layer and the formation of the ZnO-RGO-ZnO area as a leakage prevention barrier in the negative bias region. In addition, through X-ray photoelectron spectroscopy analysis, it was found that the formation of ZnC bonds allows for the stable operation of the proposed RGO-embedded ZnO TFT. These results will provide important information for the design of high-mobility TFT architectures for various applications. [Display omitted] •ZnO-based TFTs with RGO-embedded layers in the active channel were fabricated.•High mobility of embedded-RGO layers improved the performance of conventional ZnO TFTs.•ZnC bonds were formed at the interface of the ZnO/RGO layers during heat treatment.•ZnC bonds prevented charge carrier trapping that might occur at the ZnO/RGO interface.•ZnO-based TFTs with RGO-embedded layers exhibited stable unipolar switching characteristics.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2018.11.004