Phase transformation and dielectric properties of Y doped HfO2 thin films

•Y doped HfO2 films are grown using a solution processing method.•The microstructure and dielectric performance are systematically characterised.•The phase transformation and relative dielectric constant are affected by grain size or film thickness.•A phase diagram is built to explain the variations...

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Bibliographic Details
Published in:Journal of alloys and compounds 2021-04, Vol.861, p.158241, Article 158241
Main Authors: Liang, Hailong, Xu, Jin, Zhou, Dayu, Ren, Shiqiang
Format: Article
Language:English
Subjects:
Dielectric properties
Phase transformation
Thin films
Y doped HfO2
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Summary:•Y doped HfO2 films are grown using a solution processing method.•The microstructure and dielectric performance are systematically characterised.•The phase transformation and relative dielectric constant are affected by grain size or film thickness.•A phase diagram is built to explain the variations in the crystal structure and dielectric properties. In this work, we investigated the dielectric properties of yttrium (Y) doped hafnium oxide (HfO2) films using metal-insulator-semiconductor structures with various Y contents and film thicknesses. A phase diagram was built to explain the variations in the crystal structure and dielectric properties for Y doped HfO2 based films as a function of Y content and film thickness. This phase diagram would be a useful tool for optimising the electrical properties of Y doped HfO2 based thin films.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2020.158241