High performance foreign-dopant-free ZnO/Al Ga N ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

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Bibliographic Details
Published in:Journal of alloys and compounds 2023-03, Vol.937, p.168433, Article 168433
Main Authors: Wen, Quan, Lv, Zesheng, Lai, Shiquan, Li, Leyi, Jiang, Hao
Format: Article
Language:English
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ISSN:0925-8388
DOI:10.1016/j.jallcom.2022.168433