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Spinel-structured MnV2O4 @nitrogen-doped carbon microspheres for sodium ion batteries with ultra-long cycle stability
Vanadium oxide is provided with abundant redox centers for high theoretical capacity as anode of sodium-ion batteries (SIBs), but still has poor inherent conductivity and volume expansion leading to fast capacity decay during cycling. In the study, the manganese vanadate microspheres enclosed in nit...
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Published in: | Journal of alloys and compounds 2023-10, Vol.959, p.170594, Article 170594 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Vanadium oxide is provided with abundant redox centers for high theoretical capacity as anode of sodium-ion batteries (SIBs), but still has poor inherent conductivity and volume expansion leading to fast capacity decay during cycling. In the study, the manganese vanadate microspheres enclosed in nitrogen-doped carbon layers (MnV2O4 @NC) are availably constructed via reflux vanadization of Mn glycerol precursor and in situ thermal decomposition. The MnV2O4 @NC microspheres shows excellent the long-cycle stability as anode materials for SIBs, remaining the specific capacity of 205 mAh g−1 at current of 1000 mA g−1 after nearly 4000 cycles. Due to the increased valence range of bimetallic oxides and three-dimensional channels of spinel structure, the cubic MnV2O4 encapsulated by carbon shell can effectively enhance charge transfer, optimize electronic structure, stabilize crystal structure, and improve cycle stability. These results disclose the prospects of vanadate-based spinel material in high performance SIBs.
•Spinel manganese vanadate microspheres enclosed in N-doped carbon layers are synthesized through a convenient method.•The design of spinel structure enable MnV2O4 to enhance charge transport and stabilize crystals tructure.•MnV2O4 @NC hybrids hows excellent ultra-long cycle stability as anode for SIBs. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2023.170594 |