Negative magnetoresistance effect in Ba-doped layered double perovskite La2CuSnO6

• Published in: Journal of alloys and compounds 2023-12, Vol.969, p.172493, Article 172493
• Main Authors: Yang, Liping, Shi, Lei, Zhao, Jiyin, Zhang, Jinhui, Miao, Xianbing, Liu, Xuguang, Tong, Ruixue
• Format: Article
• Language: English
• Subjects: La2-xBaxCuSnO6; Layered double perovskite; Magnetization; Negative magnetoresistance
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2023.172493

The layered double perovskite La2-xBaxCuSnO6 (0.05 ≤ x ≤ 0.20) ceramics were synthesized successfully by solid-state reaction, and the crystal structure, transport and magnetic properties are investigated. It is found that the temperature-dependent resistivity ρ(T) shows a semiconductor behavior, which is related to magnetic ordering in two-dimensional CuO2 layers, and the MR effect exists in La2-xBaxCuSnO6. With decreasing the temperature, the MR effect changes from positive to negative, giving a positive maximum at Tmax (≈ TC) and showing a large negative MR effect at around 40 K with a value of about 20–30% under field H = ± 50 kOe. It is suggested that the negative MR effect in Ba-doped La2CuSnO6 is attributed to the field-induced suppression of in-plane spin-disorder scattering in CuO2 layers. A small amount of Ba doping can adjust the competition and synergy of the AFM and FM interactions through changing the tilt and distortion of CuO6 octahedrons, the in-plane Cu-O bond lengths, and the content of Jahn-Teller exciton Cu2+ ions, besides the stabilization of the La2CuSnO6 structure. The competition and synergy of the AFM and FM interactions CuO2 layers dominate the transport and magnetic properties of Ba-doped La2CuSnO6. [Display omitted] •Layered DP La2-xBaxCuSnO6 ceramics were prepared by solid-state method.•The resistivity ρ(T) shows a SM behavior and follows two different models.•The MR effect changes from positive to negative with temperature decreasing.•A large negative MR effect at around 40 K under field H = ± 50 kOe is observed.•-MR effect is due to the field-induced suppression of IP spin-disorder scattering.