Enhanced blue emission of KBaYSi2O7:Bi3+ phosphors through partial substitution of Si4+ with Al3+ and Ge4+ for white light-emitting diodes

• Published in: Journal of alloys and compounds 2024-11, Vol.1004, p.175908, Article 175908
• Main Authors: Zhu, Haiwen, Zhang, Wentao, Yang, Zhenrui, Zhang, Peicong, Huang, Yi
• Format: Article
• Language: English
• Subjects: Bismuth doping; Blue-emitting; Luminescence enhancement; Partial substitution; Pyrosilicate
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2024.175908

The blue-emitting KBaYSi2O7:Bi3+ phosphor was prepared via the high-temperature solid-phase method, and the structural Si4+ was partially substituted by Al3+ and Ge4+ to improve its luminescence properties. A blue emission peak of the KBaYSi2O7:Bi3+ phosphor appears at 418 nm under an excitation of 370 nm, which is attributed to the 3P1→1S0 electron transition of Bi3+. The luminescence intensity (λem = 418 nm) of KBaYSi1.94Al0.06O7:0.03Bi3+ and KBaYSi1.96Ge0.04O7:0.03Bi3+ was 1.81 and 1.94 times that of KBaYSi2O7:0.03Bi3+, respectively. The luminescence intensity of phosphors at 423 K remained at 62.5 % (KBaYSi1.94Al0.06O7:0.03Bi3+) and 65.7 % (KBaYSi1.96Ge0.04O7:0.03Bi3+) of the initial values (at 303 K), respectively. The actual w-LEDs were fabricated with these blue-emitting phosphors, emitting a warm and bright white light. Therefore, the KBaYSi2-xAlxO7:0.03Bi3+ and KBaYSi2-yGeyO7:0.03Bi3+ blue-emitting phosphors with excellent luminescence performance can be potential applied in w-LEDs and display fields. •Al3+ and Ge4+ substituted KBaYSi2O7:Bi3+ was first prepared for excellent blue emission.•The luminescence intensity of KBaYSi2O7:Bi3+ was enhanced by 1.81 and 1.94 times by Al3+ and Ge4+ substitution.•The combined w-LEDs with KBaYSi2-xAlxO7:Bi3+ and KBaYSi2-yGeyO7:Bi3+emit a warm and bright white light.