Thermoelectric performance of Cu2SnSe3-AgInSe2 solid solutions with Sn vacancy

Diamond-like compound Cu2SnSe3 has garnered widespread attentions in the field of thermoelectricity due to its considerable performance and non-toxic/earth-abundant characters. However, the high lattice thermal conductivity and low carrier concentration of pristine Cu2SnSe3 pose a significant barrie...

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Bibliographic Details
Published in:Journal of alloys and compounds 2025-01, Vol.1010, p.177071, Article 177071
Main Authors: Qian, Changcheng, Zhang, Kaiqi, Zhang, Bin, Ji, Xiao, Zhao, Ting, Zhang, De, Wang, Guiwen, Lu, Xu, Zhou, Xiaoyuan
Format: Article
Language:English
Subjects:
Diamond-like compound
Lattice thermal conductivity
Solid solution
Thermoelectric performance
Vacancy-doping
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Summary:Diamond-like compound Cu2SnSe3 has garnered widespread attentions in the field of thermoelectricity due to its considerable performance and non-toxic/earth-abundant characters. However, the high lattice thermal conductivity and low carrier concentration of pristine Cu2SnSe3 pose a significant barrier for further thermoelectric performance optimization. In this study, we make a series of Cu2SnSe3 based solid solutions with AgInSe2 to reduce the lattice thermal conductivity, while simultaneously modulating the carrier concentration by introducing Sn vacancies. This approach leads to a significant enhancement in thermoelectric performance of Cu2SnSe3, finally achieving a maximum zT value of 1.02 in the (Cu2Sn0.99Se3)0.8 (AgInSe2)0.2 sample at 773 K. •Cu2SnSe3 based solid solutions with AgInSe2 holding cubic structure are synthesized.•The reduced lattice thermal conductivity of 0.53 W m−1K−1 at 773 K•Sn vacancy regulates the carrier concentration, which results in a peak zT of 1.02 in the (Cu2Sn0.99Se3)0.8 (AgInSe2)0.2 sample.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2024.177071