Heterojunctions of silver antimony sulfide selenide fabricated on stainless steel substrates using CBD and selenization in ambient air

• Published in: Journal of alloys and compounds 2025-01, Vol.1012, p.178345, Article 178345
• Main Authors: Capistrán-Martínez, Jesús, Romano-Trujillo, R., Gracia-Jiménez, J.M., Coyopol, A., Silva-González, N.R., García, G., Galeazzi, R., Nieto-Caballero, F.G., Rosendo, E., Morales, C.
• Format: Article
• Language: English
• Subjects: Chemical deposition; Heterojunctions; Selenization in ambient air; Silver antimony sulfide selenide; Stainless steel
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2024.178345

Silver antimony sulfide selenide AgSb(S,Se)2 heterojunctions were fabricated on 304 stainless steel (SS304) substrates. The AgSb(S,Se)2 films were synthesized through chemical bath deposition (CBD) of AgSbS2, followed by selenization in ambient air. Selenization time was varied from 15 to 60 minutes, using selenium vapor at 400 ºC and a substrate temperature of 175 ºC. The optimal selenization time of 30 min resulted in a 13 % atomic percentage selenium content, a band gap of 1.58 eV, and an electrical conductivity of 8.84x10−7 Ω−1 cm−1. The cubic structure was confirmed through X-ray diffraction with crystal sizes between 7.15 and 8.48 nm. Raman spectroscopy identified oxide compounds, including Ag2O and SeO2. Energy-dispersive spectroscopy (EDS) showed an Ag/Sb metal ratio below 1 and a decrease in oxygen content from 39.57 % to 30.81 % by increasing selenization time. SEM revealed compact films with grain sizes from 2 µm to 20 µm and selenium particles within the grain boundaries. Dark current-voltage I-V characteristics of AgSb(S,Se)2 heterojunctions showed a diode behavior. The saturation current was 10−7 A, and the threshold voltage ranged from 0.72 to 0.80 V. This work demonstrates that AgSb(S,Se)2 heterojunctions can be achieved on stainless steel substrates. •AgSb(S,Se)₂ thin films were fabricated on stainless steel using CBD and ambient air selenization.•The cubic crystal structure and nanocrystallinity of AgSb(S,Se)2 films were confirmed by XRD.•The presence of Ag2O and SeO2 compounds was detected by Raman spectroscopy.•Optimal 30-minute selenization enhanced the optoelectronic properties of AgSb(S,Se)₂, achieving a direct 1.58 eV band gap.•AgSb(S,Se)2/CdS heterojunctions fabricated on stainless steel showed the I-V characteristic of a diode.