MOVPE-grown quantum cascade lasers operating at ∼9 μm wavelength

We report entirely MOVPE-grown QCL lasers operating around 9 μm. High-resolution X-ray diffraction analysis and TEM data confirm precise thickness and composition control for the individual layers. Consequently, these MOVPE-grown QCLs demonstrate a pulsed mode performance comparable to similarly des...

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Bibliographic Details
Published in:Journal of crystal growth 2004-12, Vol.272 (1), p.682-685
Main Authors: Krysa, A.B., Roberts, J.S., Green, R.P., Wilson, L.R., Page, H., Garcia, M., Cockburn, J.W.
Format: Article
Language:English
Subjects:
A3. Metalorganic vapor phase epitaxy
B3. Quantum cascade laser
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optics
Physics
Semiconductor lasers
laser diodes
Vapor phase epitaxy
growth from vapor phase
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Description
Summary:We report entirely MOVPE-grown QCL lasers operating around 9 μm. High-resolution X-ray diffraction analysis and TEM data confirm precise thickness and composition control for the individual layers. Consequently, these MOVPE-grown QCLs demonstrate a pulsed mode performance comparable to similarly designed MBE-grown devices. QCLs having a conventional three-well active region design exhibit a threshold current density of ∼1.5 kA cm −2 at 12 K and continue to lase up to room temperature. Furthermore, QCLs designed with a four-QW double-phonon active region show a threshold current density as low as 880 A cm −2 at 12 K and 3.75 kA cm −2 at 300 K with peak powers in excess of 1 W.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.08.066