Defect formation in silicon carbide large-scale ingots grown by sublimation technique

A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon particle suspended in a gas ambient appears to be a...

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Bibliographic Details
Published in:Journal of crystal growth 2005-02, Vol.275 (1), p.e485-e489
Main Authors: Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M.
Format: Article
Language:English
Subjects:
A2. Growth from vapor
B2. Semiconducting silicon compounds
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Summary:A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon particle suspended in a gas ambient appears to be a drag force, thermophoretic force being essential only for the relatively low temperatures ( T20 K/cm). It is shown that the radius of suspended particles may achieve hundreds of micrometers, and the data of calculations are in agreement with the experiment.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.11.112