Infrared measurement of Ge concentration in CZ–Si

• Published in: Journal of crystal growth 2005-05, Vol.279 (1), p.65-69
• Main Authors: Jiang, Zhongwei, Zhang, Weilian, Niu, Xinhuan, Yan, Liqin
• Format: Article
• Language: English
• Subjects: A1. FTIR; A1. Ge concentration; A2. Czochralski method; B1. SiGe single crystal; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Structure of solids and liquids; crystallography
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.02.021

High concentration Ge-doped in CZ–Si single crystals were measured by Fourier transform infrared spectroscopy (FTIR) at room temperature (RT) and 10 K together with the SEM-energy dispersive X-ray (EDX) spectroscopy. We make use of the new peak that appears at the wave number of 710 cm −1. This peak becomes clearer with increasing concentration of Ge, the relation between absorption coefficient ( α max ), half-peak breadth ( W 1/2) and Ge concentration is determined. And the formulas of determining Ge concentration in CZ–Si single crystals by means of FTIR technology have been given at RT and 10 K. The result of error analysis indicates that FTIR technology is capable of determining the Ge concentration in CZ–Si single crystal.