Erratum to “MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si” [J. Cryst. Growth 310 (2008) 1010–1014]

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Bibliographic Details
Published in:Journal of crystal growth 2009-12, Vol.311 (23), p.4812-4812
Main Authors: Black, Kate, Jones, Antony C., Chalker, Paul R., Gaskell, Jeffrey M., Murrey, Robert T., Joyce, Tim B., Rushworth, Simon A.
Format: Article
Language:English
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.09.028