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InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasers

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Bibliographic Details
Published in:	Journal of crystal growth 2010-04, Vol.312 (8), p.1165-1169
Main Authors:	KIRCH, Jeremy, GARROD, Toby, MEYER, Jerry R, KUAN, Tung-Sheng, KIM, Sangho, PARK, Joo H, SHIN, Jae C, MAWST, L. J, KUECH, T. F, SONG, X, BABCOCK, S. E, VURGAFTMAN, Igor
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other topics in nanoscale materials and structures Photoluminescence Physics Vapor phase epitaxy growth from vapor phase
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