Growth of A-plane GaN on (010) LiGaO2 by plasma-assisted MBE

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Bibliographic Details
Published in:Journal of crystal growth 2010-05, Vol.312 (10), p.1665-1669
Main Authors: SCHUBER, R, CHOU, M. M. C, VINCZE, P, SCHIMMEL, Th, SCHAADT, D. M
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.02.030