Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

We have succeeded in effectively stopping the propagation of basal stacking faults in (1 1 −2 2) semipolar GaN films on sapphire using an original epitaxial lateral overgrowth process. The growth conditions were chosen to enhance the growth rate along the [0 0 0 1] inclined direction. Thus, the crys...

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Bibliographic Details
Published in:Journal of crystal growth 2010-09, Vol.312 (19), p.2625-2630
Main Authors: Kriouche, N., Vennéguès, P., Nemoz, M., Nataf, G., De Mierry, P.
Format: Article
Language:English
Subjects:
A1 .Basal stacking faults
A3. Epitaxial lateral overgrowth
A3. MOVPE
B2. Semipolar GaN
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Stacking faults and other planar or extended defects
Structure of solids and liquids
crystallography
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Vapor phase epitaxy
growth from vapor phase
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Summary:We have succeeded in effectively stopping the propagation of basal stacking faults in (1 1 −2 2) semipolar GaN films on sapphire using an original epitaxial lateral overgrowth process. The growth conditions were chosen to enhance the growth rate along the [0 0 0 1] inclined direction. Thus, the crystal expands laterally until growth above the a-facet of the adjacent crystal seed, where the basal stacking faults emerge. The growth anisotropy was monitored using scanning electron microscopy. The faults filtering and improvement of crystalline quality were attested by transmission electron microscopy, X-ray diffraction and low temperature photoluminescence, which exhibits high intensity band-edge emission with low stacking faults related emission.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.05.038