Migration-enhanced metal-organic chemical vapor deposition of AlxIn1-xN/GaN heterostructures (x>0.75) on c-plane sapphire

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Bibliographic Details
Published in:Journal of crystal growth 2011-07, Vol.327 (1), p.98-101
Main Authors: BILLINGSLEY, Daniel, JINWEI YANG, GASKA, Remis, SHUR, Michael
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Diffusion in solids
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Transport properties of condensed matter (nonelectronic)
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.06.015