Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

• Published in: Journal of crystal growth 2016-09, Vol.449, p.148-155
• Main Authors: Paduano, Qing, Snure, Michael, Weyburne, David, Kiefer, Arnold, Siegel, Gene, Hu, Jianjun
• Format: Article
• Language: English
• Subjects: Low dimensional structures; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III–V materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2016.06.012

A systematic study of the growth of atomically smooth few-layer sp2 bonded BN on 50mm sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using Triethylboron (TEB) and NH3 as precursors is described. Based on the experimental results obtained using Raman spectroscopy, atomic force microscopy (AFM), X-ray reflectance measurements and transmission electron microscopy, we explored the growth parameter space and identified three different growth modes: random three-dimensional (3D) growth, a self-terminating few-layer growth mode, and a very slow layer-by-layer mode. The growth mode depends on the temperature, pressure, V/III ratio, and surface nitridation conditions, as follows: 3D island growth is dominant in the low V/III range and is characterized by a decreasing growth rate with increasing deposition temperature. When the V/III ratio is increased this 3D island growth mode transitions to a self-terminating few-layer growth mode. An additional transition from self-terminating growth to 3D growth occurs when the growth pressure is increased. Very slow layer by layer growth is found at high temperature and low pressure. Finally, substrate surface nitridation promotes self-terminating growth that results in atomically smooth films. •A systematic study of the growth of atomically smooth few-layer BN is conducted.•Growth modes are identified as: random 3D, self-terminating, and layer-by-layer mode.•Few-layer sp2 bonded BN is confirmed based on TEM, XRR, and Raman.