Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy

We have studied the growth process of the topological insulator (TI) Sb2Te3 on Si(111) by scanning tunneling microscopy. High quality thin films from more than 22nm down to 1nm in thickness have been deposited by molecular beam epitaxy. To determine the thickness and domain formation of the films, x...

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Bibliographic Details
Published in:Journal of crystal growth 2016-11, Vol.453, p.158-162
Main Authors: Lanius, M., Kampmeier, J., Kölling, S., Mussler, G., Koenraad, P.M., Grützmacher, D.
Format: Article
Language:English
Subjects:
A1. Atom probe tomography
A1. Crystal morphology
A3. Molecular beam epitaxy
B1. Antimonides
B1. Tellurides
B2. Topological insulator
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Summary:We have studied the growth process of the topological insulator (TI) Sb2Te3 on Si(111) by scanning tunneling microscopy. High quality thin films from more than 22nm down to 1nm in thickness have been deposited by molecular beam epitaxy. To determine the thickness and domain formation of the films, x-ray reflectivity and x-ray diffraction were utilized. In comparison to previous studies of the TI Bi2Te3, the growth mechanism of Sb2Te3 shows a similar transition from nucleation and growth in Sb–Te and Te–Te bilayers, respectively, to mound formation for thicker films. Atom probe tomography measurements reveal a intermixed interface between Sb2Te3 and Si(111) substrate. These findings can explain the high density of defects and domains. •Single-crystalline topological insulator Sb2Te3 grown on Si (111) by MBE.•Formation of twin domains and dislocations determined by XRD and STM.•Sb/Te accumulation layer at the Sb2Te3/Si interface detected by atom probe tomography.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.08.016