Fabrication and characterization of a high-electron-mobility transistor using a sputtering buffer layer on a Si substrate

•Stress control was performed through sputtering.•The conditions of the AlN layer were fixed, and the change in stress was evaluated by changing the deposition conditions of the GaN layer.•Conventional HEMTs were fabricated to investigate device performance using the sputtered GaN buffer layers.•The...

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Bibliographic Details
Published in:Journal of crystal growth 2023-08, Vol.616, p.127259, Article 127259
Main Authors: Ueoka, Yoshihiro, Suemoto, Yuya, Kiuchi, Maki, Takahashi, Tokio, Shimizu, Mitsuaki, Mesuda, Masami
Format: Article
Language:English
Subjects:
A1. Stresses
A3. Physical vapor deposition processes
A3. Superlattices
B1. Nitride
B2. Semiconducting III-V materials
B3. High electron mobility transistors
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Summary:•Stress control was performed through sputtering.•The conditions of the AlN layer were fixed, and the change in stress was evaluated by changing the deposition conditions of the GaN layer.•Conventional HEMTs were fabricated to investigate device performance using the sputtered GaN buffer layers.•The surface roughness of sputtered GaN was smooth with Ra under 1 nm, and the grain size was under sub-micron meters. A high-electron-mobility transistor (HEMT) was developed using a high-purity gallium nitride (GaN) sputtering target (oxygen content of 
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2023.127259