Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE

•Low temperature improves surface flatness of undoped InAs growth on GaAs.•Diethylzinc doping improves surface flatness by the improved coverage ratio.•Doping concentration range is clarified to improve the surface flatness using the Raman and AFM measurement. We investigate the effect of diethylzin...

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Bibliographic Details
Published in:Journal of crystal growth 2023-09, Vol.617, p.127274, Article 127274
Main Authors: Arai, Masakazu, Nakagawa, Shota, Hombu, Koki, Hirata, Yasushi, Maeda, Koji
Format: Article
Language:English
Subjects:
A1. Atomic force microscopy
A1. Crystal morphology
A1. Doping
A3. Low press
B2. Semiconducting III-V materials
B3. Infrared devices
Metalorganic vapor phase epitaxy
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Summary:•Low temperature improves surface flatness of undoped InAs growth on GaAs.•Diethylzinc doping improves surface flatness by the improved coverage ratio.•Doping concentration range is clarified to improve the surface flatness using the Raman and AFM measurement. We investigate the effect of diethylzinc doping on surface roughness during InAs growth on a GaAs substrate using metal-organic vapor phase epitaxy. Surface roughness was measured using atomic force microscopy and scanning electron microscopy. The surface flatness was considerably improved following the introduction of diethylzinc. Furthermore, we evaluate the Raman scattering and X-ray diffraction to investigate the crystallinity. The results confirm that diethylzinc doping effectively improves surface roughness.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2023.127274