Anisotropy in the anodic dissolution of silicon elucidated by in situ infrared spectroscopy

The anodic dissolution of silicon in dilute HF electrolyte exhibits some anisotropy in the region of the first electropolishing plateau. This anisotropy can plausibly be assigned to an orientation-dependent surface chemistry. The silicon|dilute fluoride electrolyte interface has been investigated by...

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Bibliographic Details
Published in:Journal of electroanalytical chemistry (Lausanne, Switzerland) Switzerland), 2004-02, Vol.563 (1), p.3-8
Main Authors: Outemzabet, R., Cherkaoui, M., Ozanam, F., Gabouze, N., Kesri, N., Chazalviel, J.-N.
Format: Article
Language:English
Subjects:
Anodic dissolution
Anodic film
Chemistry
Electrochemistry
Electrodeposition
Exact sciences and technology
General and physical chemistry
IR spectroscopy (IR)
Semiconductor
Silicon electrode
Study of interfaces
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Summary:The anodic dissolution of silicon in dilute HF electrolyte exhibits some anisotropy in the region of the first electropolishing plateau. This anisotropy can plausibly be assigned to an orientation-dependent surface chemistry. The silicon|dilute fluoride electrolyte interface has been investigated by in situ infrared vibrational spectroscopy in the differential mode, in the potential region where the surface turns from hydrogenated to oxidised. Silicon surfaces of different orientations exhibit closely similar behaviour. However, careful analysis of the ν OH region reveals a significant difference in the concentration of SiOH groups at (1 0 0)- and (1 1 1)-oriented Si surfaces. This observation points to the key role of the SiOH groups in determining the anisotropic behaviour of the electrochemical dissolution of silicon.
ISSN:1572-6657
1873-2569
DOI:10.1016/j.jelechem.2003.07.036