Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

• Published in: Journal of the European Ceramic Society 2022-09, Vol.42 (12), p.4846-4854
• Main Authors: Hu, Jiabin, Zhang, Bo, Li, Cong, Wang, Laili, Wang, Shenghe, Shi, Zhongqi, Yang, Jianfeng
• Format: Article
• Language: English
• Subjects: Bimodal microstructure; Flexural strength; Gas-pressure sintering; Silicon nitride; Thermal conductivity
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/j.jeurceramsoc.2022.04.049

Si3N4 ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si3N4 with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si3N4 particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si3N4 ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si3N4 compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m−1·K−1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates. •Si3N4 with a bimodal microstructure was prepared by two-step gas-pressure sintering.•The α→β transformation rate can be tailored by the pre-sintering temperature.•The Si3N4 pre-sintered at 1525 °C has the optimal comprehensive properties.•The prepared Si3N4 holds great application prospects for ceramic substrates.